Silicon for Semiconductor Devices and Electronic Chips Manufacture
The materials are applied in semiconductor devices and electronic chips industry
SPECIFICATION:
| Dopants |
Phosphorus, Boron |
| Conductive type |
«N», «Ð» |
| Dislocation density |
10 ñì-2 max. |
| Resistivity, nom. values |
0,008-50 ohm•cm |
| Relative deviation resistivityof ends from nominal |
15-35 % |
| Oxygen concentration |
9•1017 ñì-3 max. |
| Carbon concentration |
1•1017 ñì-3 max. |
ORIENTATION
| Crystal orientation |
(111), (100) |
| Crystal axis deviation from specified orientation |
3 deg. max. |
APPEARANCE
| Crystal diameter |
80 - 100 mm |
Ingots shaped as a cylinder
